SiGe BiCMOS Technology for Wireless and Optical Application - Jazz Semiconductor

Jazz Semiconductor announced the release of its SiGe BiCMOS 130nm technology, combination of 130nm CMOS technology with 200GHz HBT NPN transistors to build high performance RF ICs. Targeted application  are in for optical and wireless communication. The SiGe BiCMOS 130nm technology offers  advanced analog components such as resistors, inductors and capacitors and high-density digital circuitry. This semiconductor  technology provides scaling of both the analog and digital blocks in a SoC approach.

Marco Racanelli, Jazz Semiconductor, said:

The Jazz SiGe BiCMOS 130nm process further extends our SiGe technology roadmap and addresses our customers’ needs for a high-performance SiGe BiCMOS process by complementing our 200GHz 0.18µm process with a 200GHz process at the 0.13µm node..

Our SiGe BiCMOS 130nm offering provides our customers an advantage in both performance and power consumption with the combination of a 200GHz transistor with 1.2V low-power CMOS. This combination is enabling leading edge product design in high-speed wireline, wireless and millimeter-wave applications…

SiGe BiCMOS 130nm uses a 1.2/3.3V dual gate oxide process to form the base CMOS, with the addition of SiGe transistors offering a range of Ft, Fmax, and BVceo for design flexibility, with an Ft up to 200GHz and a separate higher voltage transistor. The process also supports up to six layers of aluminum metal, a 5.6 fF/µm² linear MIM capacitor, a triple well module, Nwell resistor, MOS varactor, and a low and high value unsilicided poly resistor. The top metal is 3µm thick aluminum to support high-Q inductors. The technology is offered through Jazz Semiconductor’s integrated design environment supporting the latest EDA tools and flows for fast and accurate design cycles of RF, analog and mixed-signal products.

The SiGe BiCMOS 130nm process is available for prototyping through a Multi-Project Wafer (MPW) Program offering 5×5mm tiles. Jazz also offers a comprehensive design and modeling environment tailored to address the specific hurdles encountered in increasingly complex RF and analog designs. New PSP MOSFET models, statistical models, and a Process Control Model Tool (PCMT) are now available for Jazz processes. These groundbreaking new models and tools provide more accurate simulations, reduce design time and speed time-to-market.

Source: SiGe BiCMOS 130nm for Optical and Wireless Applicatios