New RF Amplifiers Chips from Freescale

Freescale introduced new broadband RF amplifiers. The company claim that these new products deliver high gain and linearity up to 6 GHz. The RF amplifiers are designed for general applications ranging from WiMAX base stations to RFID readers.

Following are the four new RF amplifiers with their key specifications:

MMH3111N RF amplifier

• Material: GaAs HFET
• Bandwidth: 250 MHz to 3 GHz
• Gain: 21.5 dBm P1dB output power and 11.5 dB gain at 2140 MHz

MMG3014N RF amplifier

• Material: InGaP HBT
• Bandwidth: DC to 4 GHz
• Gain: 24 dBm P1dB output power and 20 dB gain at 900 MHz

MMG3015N RF amplifier

• Material: InGaP HBT
• Bandwidth: DC to 6 GHz
• Gain: 21 dBm P1dB output power and 15.5 dB dBm gain at 900 MHz

MMG3016N RF amplifier

• Material: InGaP HFET
• Bandwidth: DC to 4 GHz
• Gain: 24 P1dB dBm output power and 15 dB of gain at 900 MHz

Packaging:

Plastic SOT-89 with a Moisture Sensitivity Level rating of 1 at a 260°C peak temperature.

Availability:

• MMG3014N and MMG3016N: Sampling: March 2007. Production: May 2007.
• MMH3111N: Sampling: February 2007. Production: June 2007.
• MMG3015N: Production: February 2007.

Source: Freescale Semiconductor